Sökning: "2DEG mobility"

Visar resultat 1 - 5 av 15 avhandlingar innehållade orden 2DEG mobility.

  1. 1. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Författare :Stefan Davidsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER

  2. 2. InP-based heterostructure field effect transistors and millimeter wave integrated circuits

    Författare :Anders Mellberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; passive components; InP; MIM capacitor; high electron mobility transistor HEMT ; monolithic microwave integrated circuit MMIC ; CPW; TL; 2DEG; heterostructure field effect transistor HFET ; spiral inductor; modeling; wideband LNA; coplanar waveguides; microstrip transmission line; modulation doped field effect transistor MODFET ; III-V semiconductor; low noise amplifier; compound semiconductor; thin film resistor TFR ; indium phosphide; low noise amplifier;

    Sammanfattning : .... LÄS MER

  3. 3. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect

    Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low-field mobility; high-electron-mobility transistor; velocity saturation; quasi-ballistic charge carrier transport; two-dimensional electron gas; charge carrier scattering mechanisms; geometrical magnetoresistance; low noise and high frequency applications; velocity peak; graphene field-effect transistor; charge carrier trans- port;

    Sammanfattning : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). LÄS MER

  4. 4. Electron Transport in Low Dimensional Systems

    Författare :Peter Ramvall; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; high mobility; low-dimensional structures; III-V semiconductors; quantum wells; heterojunctions; quantum Hall effect; edge channels; Shubnikov-de Haas effect; alloy-disorder scattering; Y-branch switch; two dimensional electron gas; Fysik; Fysicumarkivet A:1996:Ramvall; Physics; spin splitting; mag;

    Sammanfattning : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. LÄS MER

  5. 5. MOCVD growth of GaN-based high electron mobility transistor structures

    Författare :Jr-Tai Chen; Erik Janzén; Urban Forsberg; James S. Speck; Linköpings universitet; []

    Sammanfattning : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. LÄS MER