Sökning: "Stefan Davidsson"

Hittade 2 avhandlingar innehållade orden Stefan Davidsson.

1. 1. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

   Författare :Stefan Davidsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

   Sammanfattning : .... LÄS MER

3. 2. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

   Författare :Stefan Davidsson; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al_{2< sub>O3< sub>}; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

   Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER