Sökning: "transconductance mixer"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden transconductance mixer.

1. 1. Millimeter and Sub-Millimeter Wave Integrated Active Frequency Down-Converters

   Författare :Yu Yan; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 145 GHz; self-oscillating mixer; mixer; conversion gain; millimeter wave; radar; mHEMT; noise figure; monolithic; sub-millimeter wave; InP; THz; resistive mixer; Gilbert mixer; DHBT; SiGe; 340 GHz; 220 GHz; FMCW; transconductance mixer; BiCMOS; transceiver; harmonic; GaAs;

   Sammanfattning : In recent years, the increasing amount of data transmission, the need for automotiveradars, and standoff imaging for security applications are the main factors that accelerateresearch in the millimeter and sub-millimeter wave frequency ranges. The semiconductorindustries have continuously developed their processes, which have opened upopportunities for manufacturing monolithically integrated circuits up to a few hundredGHz, based on transistor technologies. LÄS MER

3. 2. Silicon Carbide Microwave Devices

   Författare :Joakim Eriksson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

   Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

4. 3. Nanowire Transistors and RF Circuits for Low-Power Applications

   Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

   Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER

5. 4. Vertical InAs Nanowire Devices and RF Circuits

   Författare :Martin Berg; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

   Sammanfattning : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. LÄS MER

7. 5. Wide Bandgap MMIC Technology

   Författare :Mattias Sudow; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

   Sammanfattning : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. LÄS MER