Sökning: "noise figure"

Visar resultat 1 - 5 av 57 avhandlingar innehållade orden noise figure.

  1. 1. Experimentally Based HFET Modeling for Microwave and Millimeter Wave Applications

    Författare :Mikael Garcia; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MODFET; soft-breakdown; cold FET; large-signal; source balance; SDHT; dispersion; noise figure; temperature noise model; small-signal; TEGFET; direct extraction; Chalmers model; noise parameters; modeling; HEMT; HFET; noise;

    Sammanfattning : Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMICs). Circuit simulations based on accurate transistor models are one of the keys to high circuit yield. Transistor models can also be used to trace problems in the device fabrication processes. LÄS MER

  3. 2. Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers

    Författare :Junjie Li; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Channel noise; InP HEMT; cryogenic; subthreshold swing.; noise temperature; spacer thickness; low-noise amplifier;

    Sammanfattning : High electron mobility transistor (InP HEMT) cryogenic low noise amplifiers (LNAs) have made significant improvements in noise and gain following decades of development. Applications are found from radio astronomy to quantum computing. LÄS MER

  4. 3. Noise and Saturation Properties of Fiber Optical

    Författare :Per Kylemark; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear fiber optics; four-wave mixing; single-pumped; regeneration; saturation; dual-pumped; noise figure; parametric amplification;

    Sammanfattning : Fiber Optical Parametric Amplifiers (FOPAs) are based on a highly efficient Four-wave Mixing process in highly nonlinearfibers and have gained a lot of interest since it was shown that ahigh gain can be obtained. They are multi-functional devices thatare not only limited to amplifying signals, but their wide range ofapplicability also include wavelength conversion, pulse-generation,optical sampling and also regeneration at very high bit-rates. LÄS MER

  5. 4. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

    Författare :Mikael Malmkvist; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

    Sammanfattning : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. LÄS MER

  7. 5. Ultralow noise pre-amplified receiver for free-space optical communications

    Författare :Ravikiran Kakarla; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; sensitivity; noise figure; optical injection locking; Phase sensitive amplifier;

    Sammanfattning : The demand for high data rate in space communication links is increasing due to the growth of space exploration missions inter-satellite, and satellite-to-Earth data transmission. Optical communication systems capable of handling hundreds of Gigabits per second data transmission with a single light carrier and are suitable for such space links. LÄS MER