Sökning: "high-power microwave devices"

Visar resultat 1 - 5 av 17 avhandlingar innehållade orden high-power microwave devices.

1. 1. Silicon Carbide Microwave Devices

   Författare :Joakim Eriksson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

   Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

3. 2. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

4. 3. Microwave Breakdown: Physics and Applications

   Författare :Ulf Jordan; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; resonators; breakdown plasma; waveguides; microwave breakdown; metal wedges; HPM protection;

   Sammanfattning : Theories for microwave breakdown in gases, with emphasis on Air, are presented in this thesis. Underlying physical processes are described together with models suitable for scientific research and technical development. LÄS MER

5. 4. Development of SiC MESFET Based MMIC Technology

   Författare :Mattias Sudow; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MIM capacitor; high power amplifier; limiter; SiC MMIC; SiC MESFET; SiC Schottky; TFR; high levelmixer; spiral inductor; via-hole;

   Sammanfattning : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. LÄS MER

7. 5. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

   Författare :Mattias Thorsell; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; noise modelling; nonlinear measurement; active load-pull; noise measurement; thermal characterisation; AlGaN GaN HEMT; nonlinear modelling;

   Sammanfattning : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. LÄS MER