Sökning: "Schottky diode"

Visar resultat 1 - 5 av 33 avhandlingar innehållade orden Schottky diode.

  1. 1. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  2. 2. Design and characterisation of terahertz Schottky diode harmonic mixers

    Författare :Divya Jayasankar; Chalmers tekniska högskola; []
    Nyckelord :Schottky diodes; Phase locking; Harmonic mixers; Heterodyne receivers; Terahertz electronics; Frequency stabilisation; Frequency converters;

    Sammanfattning : Efficient, compact, and reliable terahertz frequency converters preferably operating at ambient temperature are crucial for stabilising far-infrared optical sources. This thesis focuses on the design and characterisation of terahertz Schottky diode harmonic mixers for frequency stabilisation of quantum-cascade lasers. LÄS MER

  3. 3. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers University of Technology; []
    Nyckelord :SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  4. 4. Modelling of Terahertz Planar Schottky Diodes

    Författare :Aik-Yean Tang; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; S-parameter extraction; Electro-thermal; Schottky diodes; Skin effect; Electromagnetic; Frequency multipliers; High-power frequency multiplier; Current crowding; Proximity effect; Submillimetre wave generation and detection; Geometric modelling; Gallium Arsenide;

    Sammanfattning : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. LÄS MER

  5. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER