Sökning: "Schottky diode"

Visar resultat 1 - 5 av 34 avhandlingar innehållade orden Schottky diode.

  1. 1. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Detta är en avhandling från Stockholm : KTH

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  2. 2. Advanced Schottky Diode Receiver Front-Ends for Terahertz Applications

    Detta är en avhandling från Stockholm : KTH

    Författare :Peter Sobis; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; terahertz electronics; TRL-calibration; frequency converters; down converters; phase shifters; S-parameter measurements; Schottky diodes; subharmonic mixers; radiometers; terahertz technology; submillimetre wave technology; heterodyne receivers; differential phase shifters; sideband separating mixers;

    Sammanfattning : This thesis treats the development of high frequency circuits for increased functionality of terahertz receiver front-ends based on room temperature Schottky diode technology. This includes the study of novel circuit integration schemes, packaging concepts as well as new measurement and characterisation techniques. LÄS MER

  3. 3. Silicon Carbide Microwave Devices

    Detta är en avhandling från Stockholm : KTH

    Författare :Joakim Eriksson; [2002]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  4. 4. Modelling of Terahertz Planar Schottky Diodes

    Detta är en avhandling från Stockholm : KTH

    Författare :Aik-Yean Tang; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; S-parameter extraction; Electro-thermal; Schottky diodes; Skin effect; Electromagnetic; Frequency multipliers; High-power frequency multiplier; Current crowding; Proximity effect; Submillimetre wave generation and detection; Geometric modelling; Gallium Arsenide;

    Sammanfattning : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. LÄS MER

  5. 5. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER