Sökning: "SiC Schottky"

Visar resultat 1 - 5 av 28 avhandlingar innehållade orden SiC Schottky.

  1. 1. Development of SiC MESFET Based MMIC Technology

    Författare :Mattias Sudow; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MIM capacitor; high power amplifier; limiter; SiC MMIC; SiC MESFET; SiC Schottky; TFR; high level mixer; spiral inductor; via-hole;

    Sammanfattning : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. LÄS MER

  2. 2. Wide Bandgap MMIC Technology

    Författare :Mattias Sudow; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

    Sammanfattning : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. LÄS MER

  3. 3. Growth and characterization of SiC and GaN

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Rafal Ciechonski; Linköpings universitet.; Linköpings universitet.; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; TECHNOLOGY Engineering physics Material physics with surface physics; TEKNIKVETENSKAP Teknisk fysik Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  4. 4. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Romain Esteve; KTH.; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Sammanfattning : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. LÄS MER

  5. 5. SiC Varactors for Dynamic Load Modulation of Microwave Power Amplifiers

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Christer Andersson; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear characterization; varactors; active load-pull; power; microwave; amplifier; dynamic load modulation; SiC; energy efficiency;

    Sammanfattning : The rapid consumer adoption of mobile services is leading to an exponential growth in wireless data traffic. In order to accommodate more concurrent high data-rate users, the required complexity of transmitting radio base station (RBS) power amplifiers (PAs) is increasing. LÄS MER