Sökning: "MESFET"

Visar resultat 1 - 5 av 20 avhandlingar innehållade ordet MESFET.

  1. 1. Development of SiC MESFET Based MMIC Technology

    Författare :Mattias Sudow; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MIM capacitor; high power amplifier; limiter; SiC MMIC; SiC MESFET; SiC Schottky; TFR; high levelmixer; spiral inductor; via-hole;

    Sammanfattning : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. LÄS MER

  3. 2. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  4. 3. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

    Författare :Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

    Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

  5. 4. Silicon Carbide Microwave Transistors and Amplifiers

    Författare :Rolf Jonsson; Linköpings universitet; []
    Nyckelord :SiC; MESFET; Physical simulations; Microwave power amplifier; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Ibis work deals with silicon carbide (SiC) metal semieonduetor field effect transistors (MESFETs) and microwave amplifiers using them. The wide bandgap (WBG) semiconductors silicon carbide and gallium nitride have a large potential for microwave power generation. LÄS MER

  7. 5. Low phase noise voltage controlled micro- and millimeter wave oscillators

    Författare :Stefan Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; radio; anti series; microstrip resonator; silicon bipolar transistor; amplitude limiter; cavity resonator; varactor; transposed gain; MESFET; automatic gain control; VCO; delay line; laser; RF; oscillation criteria; millimetre wave; oscillator; mm-wave; noise; multiplier; fibre optic; SAW; DRO; PLL; surface acoustic wave; Si BJT; 1 f noise; FM noise; HEMT; clipping diode; HBT; YIG sphere; device; terfenol; gunn diode; stabilised; YIG film; quarts crystal; phase locked loop; magnetostrictive; resonator; phase error; whispering gallery mode; sapphire resonator; Fabry-Perot resonator; PHEMT; microwave; HFET; phase noise; DR; dielectric resonator; PM noise; balanced oscillator; piezo electric; AGC; frequency discriminator;

    Sammanfattning : .... LÄS MER