Sökning: "resistive mixer"

Visar resultat 1 - 5 av 13 avhandlingar innehållade orden resistive mixer.

  1. 1. Mixers and Multifunctional MMICs for Millimeter-Wave Applications

    Författare :Sten Gunnarsson; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; G-band; double-balanced Gilbert mixer; sub-harmonically pumped resistive mixer; pHEMT; receiver; image reject mixer; dual-quadrature mixer; balanced resistive mixer; resistive mixer; 220 GHz; high data rate; drain mixer; 53 GHz; single-chip; V-band.; radiometer; mixer; broadband wireless communication; multifunctional; MMIC; GaAs; mHEMT; transmitter; 60 GHz;

    Sammanfattning : This thesis treats the design and characterization of different mixer and multifunctional monolithic microwave integrated circuits (MMICs) in GaAs pHEMT and mHEMT technologies. The MMICs operate at the V (50 – 75 GHz) and G (140 – 220 GHz) bands and several of them demonstrate state-of-the-art performance, level of integration, novel topologies, and/or novel functionality. LÄS MER

  2. 2. Millimeter and Sub-Millimeter Wave Integrated Active Frequency Down-Converters

    Författare :Yu Yan; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 145 GHz; self-oscillating mixer; mixer; conversion gain; millimeter wave; radar; mHEMT; noise figure; monolithic; sub-millimeter wave; InP; THz; resistive mixer; Gilbert mixer; DHBT; SiGe; 340 GHz; 220 GHz; FMCW; transconductance mixer; BiCMOS; transceiver; harmonic; GaAs;

    Sammanfattning : In recent years, the increasing amount of data transmission, the need for automotiveradars, and standoff imaging for security applications are the main factors that accelerateresearch in the millimeter and sub-millimeter wave frequency ranges. The semiconductorindustries have continuously developed their processes, which have opened upopportunities for manufacturing monolithically integrated circuits up to a few hundredGHz, based on transistor technologies. LÄS MER

  3. 3. 60 GHz Mixer and Multifunctional MMICs in GaAs pHEMT and mHEMT technologies

    Författare :Sten Gunnarsson; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Image reject mixer; Broadband wireless communication; Single-chip; Multifunctional; Mixer; Balanced resistive mixer; GaAs; Dual-quadrature mixer; 60 GHz; Receiver; pHEMT; MMIC; High data-rate; Double balanced Gilbert mixer; mHEMT; Transmitter; V-band;

    Sammanfattning : In recent years, the 60 GHz band has gained increased academic and commercial interest mainly due to the relative large amount of license free and little used frequency spectrum located in vicinity of 60 GHz. The exact locations of these free frequency bands varies locally but the 5962 GHz band overlap around the world and is therefore a true world wide license free band. LÄS MER

  4. 4. Microwave and Millimeter-Wave Monolithic Integrated Circuits in CMOS and GaAs-mHEMT Technologies

    Författare :Bahar M. Motlagh; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; power divider; double-slot antenna; 60 GHz; millimeter-wave; GaAs-mHEMT; CMOS integrated circuits; antenna integration; noise measurement; 100 nm mHEMT technology; balun; capacitor; microstrip line; single-ended; 90 nm CMOS technology; single-balanced; resistive mixer; 210 GHz;

    Sammanfattning : The objective of this work has been to design and characterize microwave and millimeter-wave components and circuits within a 90 nm Si-CMOS process and a 100 nm GaAs-mHEMT process. The work is divided in two parts depending on the technology. LÄS MER

  5. 5. Monolithic Micro- and Millimeter-wave Integrated Circuits in 90 nm CMOS Technology

    Författare :Bahar M. Motlagh; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; power divider; CMOS integrated circuits; 90 nm CMOS technology; 60 GHz; microstrip line; Si-MMIC; capacitor; balun; millimeter wave; resistive mixer;

    Sammanfattning : The objective of this work has been to design and characterize microwave components and circuits within a 90 nm RF-CMOS process.The work has been divided into two parts: integration of passive components and design and characterization of several mixer circuits. LÄS MER