Sökning: "wide band gap devices"

Visar resultat 1 - 5 av 34 avhandlingar innehållade orden wide band gap devices.

  1. 1. Optical characterization of wide band gap materials by spectroscopic ellipsometry

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :O. P. Alexander Lindquist; Linköpings universitet.; Linköpings universitet.; [2001]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Wide Band Gap materials; ellipsometry; SiC; GaN;

    Sammanfattning : Spectroscopic ellipsometry has been employed in the study of wide band gap materials. Ellipsometry is based on the study of changes in the polarization state of light upon reflection on a surface. LÄS MER

  2. 2. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers

    Detta är en avhandling från Institutionen för fysik, kemi och biologi

    Författare :Timo Seppänen; Linköpings universitet.; Linköpings universitet.; [2006]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Thin film; Magnetron Sputter Epitaxy MSE ; NATURAL SCIENCES Physics; NATURVETENSKAP Fysik;

    Sammanfattning : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. LÄS MER

  3. 3. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Juan Colmenares; KTH.; [2016]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. LÄS MER

  4. 4. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Sadia Muniza Faraz; Linköpings universitet.; Linköpings universitet.; [2011]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER

  5. 5. Chemically Synthesized ZnO Nanostructures : Realization of White Optoelectronic Devices with High CRI Values

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Sadaf Jamil Rana; Linköpings universitet.; Linköpings universitet.; [2012]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Recently in a couple of decades, nanotechnology and nanoscience are becoming wide spread fields of research due to the revolutionary advances in the manufacturing processes which enable the realization of infinitesimally modest nanodevices holding a huge variety of fascinating properties and applications. Besides various functional materials, ZnO has captivated interests for a variety of applications in electronics and optoelectronics owing to its unique characteristics; such as, direct wide band gap, large exciton binding energy, semiconducting, photonic, and piezoelectric properties. LÄS MER