Sökning: "SiC MESFET"
Visar resultat 1 - 5 av 13 avhandlingar innehållade orden SiC MESFET.
1. Development of SiC MESFET Based MMIC Technology
Sammanfattning : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. LÄS MER
2. Simulation and Optimization of SiC Field Effect Transistors
Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER
3. Simulation and Optimization of SiC Field Effect Transistors
Sammanfattning : .... LÄS MER
4. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER
5. Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide
Sammanfattning : The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. LÄS MER
