Sökning: "Plamen Paskov"

Hittade 3 avhandlingar innehållade orden Plamen Paskov.

1. 1. Epitaxial strategies for defect reduction in GaN for vertical power devices

   Författare :Rosalia Delgado Carrascon; Vanya Darakchieva; Plamen Paskov; Peter Ramvall; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wavelengths and covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. LÄS MER

3. 2. Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

   Författare :Dat Tran; Plamen Paskov; Vanya Darakchieva; Mattias Thorshell; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : For the high-power (HP) electronic applications the existing Si-based devices have reached the performance limits governed by the material properties. Hence the device innovation itself is unable to enhance the overall performance. LÄS MER

4. 3. Thermal conductivity of wide and ultra-wide bandgap semiconductors

   Författare :Dat Tran; Plamen Paskov; Vanya Darakchieva; Martin Kuball; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-nitrides; β-Ga2O3; Thermal conductivity; Thermal transport;

   Sammanfattning : This PhD thesis presents experimental and theoretical studies of the thermal conductivity of wide and ultra-wide bandgap semiconductors including GaN, AlN, β-Ga2O3 binary compounds, and AlxGa1−xN, ScxAl1−xN, YxAl1−xN ternary alloys. Thermal conductivity measurements are conducted using the transient thermoreflectance (TTR) technique and the results are interpreted using analytical models based on the solution of the Boltzmann transport equation (BTE) within the relaxation time approximation (RTA). LÄS MER