Sökning: "InAs-InP"
Visar resultat 6 - 10 av 21 avhandlingar innehållade ordet InAs-InP.
6. Electron Transport in Nanowire Quantum Devices
Sammanfattning : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. LÄS MER
7. Tunneling through Nanostructures - Interactions, Interference and Broadening
Sammanfattning : In this thesis, quantum transport through nanostructures is addressed theoretically by considering simplified model systems representing the most important features of quantum dots or molecules. The generic model consists of a central region coupled to noninteracting leads. LÄS MER
8. Advanced patterning and processing for III-V nanowire device fabrication
Sammanfattning : Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. LÄS MER
9. Quantum Devices from the Assembly of Zero- and One-Dimensional Building Blocks
Sammanfattning : This thesis describes novel methods for the fabrication of nanometer-scale electronic devices, such as single-electron transistors and resonant tunneling diodes, from wire- and dot-shaped building blocks. The first part of the thesis describes the manipulation of metal nanoparticles and carbon nanotubes using an atomic force microscope. LÄS MER
10. Compound semiconductor materials and processing technologies for photonic devices and photonics integration
Sammanfattning : The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e. LÄS MER