Visar resultat 1 - 5 av 32 avhandlingar innehållade ordet InSb.
1. Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
Sammanfattning : Monolithic heterogeneous integration of III-V semiconductors with the contemporary Si Complementary Metal Oxide Semiconductor (CMOS) technology has instigated a wide range of possibilities and functionalities in the semiconductor industry, in the field of digital circuits, optical sensors, light emitters, and high-frequency communication devices. However, the integration of III-V semiconductors is not trivial due to the differences in lattice parameters, polarity, and thermal expansion coefficient. LÄS MER
Sammanfattning : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. LÄS MER
Sammanfattning : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. LÄS MER
4. Charge Transport in Semiconductor Nanowire Quantum Devices: From Single Quantum Dots to Topological Superconductors
Sammanfattning : This thesis focuses on charge transport in semiconductor InSb nanowire quantum devices, including the electron transport, the hole transport, and the Cooper pair transport. Devices in which InSb semiconductor nanowire quantum dots are coupled with normal metals, superconductors or the proximity effect induced topological superconductors are fabricated and measured. LÄS MER
Sammanfattning : The atomic and electronic structure of clean and Cs-perturbed III-V semiconductors was studied by angle-resolved photoelectron spectroscopy (ARPES), surface core level spectroscopy (SCLS), and scanning tunneling microscopy (STM). The work can be divided into three parts, dealing with low-index sur-faces, high-index surfaces, and special features of InAs. LÄS MER