Sökning: "Harri Lipsanen"

Hittade 3 avhandlingar innehållade orden Harri Lipsanen.

  1. 1. Epitaxial III-V/Si heterojunctions for photonic devices

    Författare :Giriprasanth Omanakuttan; Sebastian Lourdudoss; Yanting Sun; Harri Lipsanen; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; epitaxy; heterojunction; III-V on Si integration; solar cell; Fysik; Physics;

    Sammanfattning : Monolithic integration of III-V materials on silicon is of great interest for efficient electronic-photonic integrated devices and multijunction solar cells on silicon. However, defect formation in the heteroepitaxial layers due to lattice mismatch, thermal mismatch, and polarity mismatch makes it a great challenge. LÄS MER

  3. 2. Compound semiconductor materials and processing technologies for photonic devices and photonics integration

    Författare :Carl Reuterskiöld Hedlund; Mattias Hammar; Mikael Östling; Sebastian Lourdudoss; Harri Lipsanen; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e. LÄS MER

  4. 3. Development of 1.3-μm GaAs-based vertical-cavity surface-emitting lasers

    Författare :Petrus Sundgren; Mattias Hammar; Harri Lipsanen; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik; Physics; Fysik;

    Sammanfattning : Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are desirable as low-cost sources for optical metropolitan-area and access networks. In the development of 1.3-µm VCSELs, most attention today is given to monolithic GaAs-based solutions, although no established active material exists in this wavelength region. LÄS MER