Sökning: "Template-assisted growth"

Visar resultat 1 - 5 av 7 avhandlingar innehållade orden Template-assisted growth.

1. 1. Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy

   Författare :Heera Menon; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Rapid Melt Growth RMG ; Template Assisted Selective Epitaxy TASE ; InSb; InAs; infrared detectors; nBn detector; photoconductor; nanostructures; nanowires;

   Sammanfattning : Monolithic heterogeneous integration of III-V semiconductors with the contemporary Si Complementary Metal Oxide Semiconductor (CMOS) technology has instigated a wide range of possibilities and functionalities in the semiconductor industry, in the field of digital circuits, optical sensors, light emitters, and high-frequency communication devices. However, the integration of III-V semiconductors is not trivial due to the differences in lattice parameters, polarity, and thermal expansion coefficient. LÄS MER

3. 2. Advanced patterning and processing for III-V nanowire device fabrication

   Författare :Reza Jafari Jam; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowires NWs ; Electrodeposition; Template-assisted growth; Substrate re-use; Sacrificial layer; Fysicumarkivet A:2020:Jafari Jam;

   Sammanfattning : Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. LÄS MER

4. 3. III-V Devices for Emerging Electronic Applications

   Författare :Patrik Olausson; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

   Sammanfattning : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. LÄS MER

5. 4. Gold Electrodeposition in Semiconductor Nanowire Technology

   Författare :Reza Jafari Jam; Håkan Pettersson; Lars Samuelson; Magnus T. Borgström; Mikael Björk; Sweden Lund Lund University; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Semiconductor nanowires are widely considered as promising candidates for next generations of electronics and optoelectronics. Gold seed particles have so far been recognized as the most important catalyst for growth of nanowires. LÄS MER

7. 5. From understanding to realizing novel III-Sb materials via nanowires

   Författare :Luna Namazi; NanoLund: Centre for Nanoscience; []
   Nyckelord :Fysicumarkivet A:2018:Namazi;

   Sammanfattning : Due to their unique physical and material properties, III-Sb nanowires are considered good candidates for future devices, and test beds for understanding fundamental physics. Synthesizing these nanowires however is associated with certain challenging aspects, which are generally not present for other III-V nanowires, demanding the need for in depth investigations. LÄS MER