Sökning: "Nanowire transistors"

Visar resultat 1 - 5 av 39 avhandlingar innehållade orden Nanowire transistors.

1. 1. Electron Transport in Nanowire Quantum Devices

   Författare :Henrik Nilsson; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Superconductivity; Spin-orbit coupling; the Kondo effect; the Zeeman effect; Quantum dots; Nanowire memories; Nanowire transistors; InSb; InAs; Nanowires; Electron transport; Andreev reflections; Nanowire RF-SET; Noise in nanowires;

   Sammanfattning : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. LÄS MER

3. 2. Vertical Nanowire High-Frequency Transistors

   Författare :Sofia Johansson; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

   Sammanfattning : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. LÄS MER

4. 3. Nanowire Transistors and RF Circuits for Low-Power Applications

   Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

   Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER

5. 4. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

7. 5. InAs Nanowire Devices and Circuits

   Författare :Kristofer Jansson; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

   Sammanfattning : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. LÄS MER