Sökning: "InAs-InP"

Visar resultat 11 - 15 av 21 avhandlingar innehållade ordet InAs-InP.

  1. 11. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures

    Författare :Niclas Carlsson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; low-dimensional structures; metalorganic vapour phase epitaxy; quantum wells; self-assembled dots; quantum dots; Fysicumarkivet A:1998:Carlsson; Halvledarfysik;

    Sammanfattning : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. LÄS MER

  3. 12. Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

    Författare :Jonas Johansson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Self-assembled quantum dots; Metal organic vapour phase epitaxy; Physics; Stranski-Krastanow; Fysicumarkivet 2000:Johansson; Halvledarfysik; Semiconductory physics; Fysik;

    Sammanfattning : This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. LÄS MER

  4. 13. Realization of Complex III-V Nanoscale Heterostructures

    Författare :Sepideh Gorji; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet A:2014:Gorji Ghalamestani;

    Sammanfattning : Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and in combination with the commonly used Si material, in both thin layer and nanowire geometries. LÄS MER

  5. 14. Thermally and Optically Excited Electron Transport in Semiconductor Nanowires

    Författare :I-Ju Chen; Fasta tillståndets fysik; []
    Nyckelord :Fysicumarkivet A:2018:Chen;

    Sammanfattning : This thesis explores the transport of thermally and optically excited electrons invarious nanowire structures. On one hand, electrons are thermally excited when thetemperature is nonzero, and the thermal energy help them surmount energy barriersthat are present in the material. LÄS MER

  7. 15. Thermoelectric experiments on nanowire-based quantum dots

    Författare :Artis Svilans; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Quantum dots; Nanowire; Thermoelectric; Maximum power; Efficientcy; Carnot; Kondo effect; Fysicumarkivet A:2018:Svilans;

    Sammanfattning : This thesis experimentally investigates the possibilities of using quantum effects in semiconductor nanostructures for engineering their thermoelectric properties. More specifically, heterostructured InAs/InP nanowires are used to create short InAs quantum dots (QDs) with electronic state structure resembling that found in atoms. LÄS MER