Avancerad sökning
Visar resultat 1 - 5 av 164 avhandlingar som matchar ovanstående sökkriterier.
1. Point Defects in Silicon and Silicon-Carbide
Sammanfattning : .... LÄS MER
2. Silicon Carbide Microwave Devices
Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER
3. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide
Sammanfattning : .... LÄS MER
4. Termination and passivation of Silicon Carbide Devices
Sammanfattning : Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. LÄS MER
5. Junction barrier schottky rectifiers in silicon carbide
Sammanfattning : .... LÄS MER