Sökning: "implantation induced pas"

Hittade 2 avhandlingar innehållade orden implantation induced pas.

1. 1. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide

   Författare :Denny Åberg; KTH; []
   Nyckelord :capacitance spectrocopy; deep levels; deep level transient spectroscopy; thermal donors; thermal double donors; ultra shallow thermal donors; chemical kinetics; silicon carbide; ion implantation; implantation induced defects; implantation induced pas;

   Sammanfattning : .... LÄS MER

3. 2. Hydrogen diffusion and ion implantation in silicon carbide

   Författare :Martin Janson; KTH; []
   Nyckelord :heat abd tgernidtbanucs; electronics and electrical; materials science;

   Sammanfattning : Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. LÄS MER