Sökning: "Junction Barrier Schottky JBS"

Hittade 3 avhandlingar innehållade orden Junction Barrier Schottky JBS.

1. 1. Junction barrier schottky rectifiers in silicon carbide

   Författare :Fanny Dahlquist; KTH; []
   Nyckelord :Silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifieer; Power rectifier; Unipolar devices; Punch-through design;

   Sammanfattning : .... LÄS MER

3. 2. Junction Barrier Schottky Rectifiers in Silicon Carbide

   Författare :Fanny Dahlquist; KTH; []
   Nyckelord :silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifier; MPS rectifier; power rectifier; punch-through design; power loss; high blocking voltage;

   Sammanfattning : .... LÄS MER

4. 3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

   Författare :Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. LÄS MER