Sökning: "implantation induced defects"
Visar resultat 1 - 5 av 8 avhandlingar innehållade orden implantation induced defects.
1. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide
Sammanfattning : .... LÄS MER
2. Spectroscopic studies of irradiation induced defects in SiC
Sammanfattning : Silicon carbide (SiC) with its applications has the potential to affect the everyday life of most citizens. As a material it has some outstanding properties concerning its mechanical and chemical toughness as well as its electrical properties for high power and high frequency applications. LÄS MER
3. Stability of point defects in silicon induced by high energy low dose ion implantation
Sammanfattning : Ion implantation is a key' process for the introduction ofdopants in semiconductor technology. It involves bombarding thesubstrate material with energetic ions. LÄS MER
4. Applications of Ion Beam Methods in Silicide/Si and Silicide/GaAs Nanometre Structures
Sammanfattning : Ion beam methods are used to analyse material (Ion Beam Analysis, IBA) and to modify the target (Ion Beam Modification of Materials, IBMM). In this thesis, ion beams have been used in various IBA techniques to investigate the surface nanometre structures, and also in an ion beam synthesis (IBS) technique to form thin films and to modify material properties. LÄS MER
5. Hydrogen diffusion and ion implantation in silicon carbide
Sammanfattning : Secondary ion mass spectrometry (SIMS) has been employed tostudy the spatial distributions resulting from mass transportby diffusion and ion implantation in single crystal siliconcarbide (SiC). By a systematic analysis of this data,fundamental processes that govern these phenomena have beenderived. LÄS MER