Sökning: "dlts"

Visar resultat 1 - 5 av 20 avhandlingar innehållade ordet dlts.

  1. 1. Electrical Properties of Gold-related Defect Complexes in Silicon

    Författare :Einar Sveinbjörnsson; Chalmers University of Technology; []
    Nyckelord :DLTS; gettering; Au in Si; lithium diffusion; Au-H complexes; Au-Li complexes; deep levels; phosphorus diffusion; hydrogen in silicon;

    Sammanfattning : This thesis describes three extensive experiments concerning the properties of gold as an impurity atom in crystalline silicon. The first study is an investigation of the effect of phosphorus diffusion on the distribution of gold atoms within a silicon crystal. LÄS MER

  2. 2. Electrical Characterization of Integrated InAs Nano-Structures

    Författare :Gvidas Astromskas; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; DLTS; Fermi level pinning; epitaxial growth; threshold voltage; nanowire capacitance; overgrowth; Hall mobility; GaSb; InAs;

    Sammanfattning : This thesis analyzes the electrical properties of InAs nano-structures, that are integrated into different materials and geometries. The thesis describes integration related issues of InAs, the epitaxial synthesis of the InAs nano-structures and summarizes experimental techniques for analysis of electrical properties of the integrated structures. LÄS MER

  3. 3. Point Defects in Silicon and Silicon-Carbide

    Författare :Paolo Pellegrino; KTH; []
    Nyckelord :silicon; silicon carbide; defects; dlts;

    Sammanfattning : .... LÄS MER

  4. 4. Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs)

    Författare :Nargis Bano; Omer Nour; Magnus Willander; David Rogers; Linköpings universitet; []
    Nyckelord :Zinc Oxide nanorods; White light emitting diode; Photoluminescence; Cathodoluminescence; Electroluminescence; Deep level transient spectroscopy DLTS ;

    Sammanfattning : ZnO material based hetero-junctions are a potential candidate for the design andrealization of intrinsic white light emitting devices (WLEDs) due to several advantages overthe nitride based material system. During the last few years the lack of a reliable andreproducible p-type doping in ZnO material with sufficiently high conductivity and carrierconcentration has initiated an alternative approach to grow n-ZnO nanorods (NRs) on other ptypeinorganic and organic substrates. LÄS MER

  5. 5. Detection and removal of traps at the SiO2/SiC interface

    Författare :Halldor Olafsson; Chalmers University of Technology; []
    Nyckelord :interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Sammanfattning : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. LÄS MER