Sökning: "MESFET model"

Visar resultat 1 - 5 av 9 avhandlingar innehållade orden MESFET model.

  1. 1. FET mixers and nonlinear FET models for intermodulation analysis

    Författare :Klas Yhland; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gate mixer; drain mixer; FET mixer; HFET model; HEMT model; resistive mixer; intermodulation; MESFET model; FET model;

    Sammanfattning : .... LÄS MER

  3. 2. Microwave FET Modeling and Applications

    Författare :Christian Fager; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MESFET; uncertainty; model; FMCW; statistical; HEMT; small-signal; extraction; distortion; intermodulation; CMOS; LDMOS; power amplifier; estimation; FET; large-signal; radar; AM noise;

    Sammanfattning : This thesis deals with three distinct topics within the areas of modeling, analysis and circuit design with microwave field effect transistors (FETs). First, the extraction of FET small-signal model parameters is addressed. LÄS MER

  4. 3. Nonlinear transistor models for microwave and millimeterwave circuits

    Författare :Lars Bengtsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; non-linear model; MESFET; volterra series; HBT; nonlinear simulation; HEMT; BJT; HFET; physical model; power spectrum measurement; harmonic balance;

    Sammanfattning : .... LÄS MER

  5. 4. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  7. 5. Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide

    Författare :Mats Hjelm; KTH; []
    Nyckelord :simulation; Monte Carlo; SiC; charge transport; MOSFET; MESFET;

    Sammanfattning : The importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. LÄS MER