Sökning: "drain mixer"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden drain mixer.

1. 1. Mixers and Multifunctional MMICs for Millimeter-Wave Applications

   Författare :Sten Gunnarsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; G-band; double-balanced Gilbert mixer; sub-harmonically pumped resistive mixer; pHEMT; receiver; image reject mixer; dual-quadrature mixer; balanced resistive mixer; resistive mixer; 220 GHz; high data rate; drain mixer; 53 GHz; single-chip; V-band.; radiometer; mixer; broadband wireless communication; multifunctional; MMIC; GaAs; mHEMT; transmitter; 60 GHz;

   Sammanfattning : This thesis treats the design and characterization of different mixer and multifunctional monolithic microwave integrated circuits (MMICs) in GaAs pHEMT and mHEMT technologies. The MMICs operate at the V (50 – 75 GHz) and G (140 – 220 GHz) bands and several of them demonstrate state-of-the-art performance, level of integration, novel topologies, and/or novel functionality. LÄS MER

3. 2. FET mixers and nonlinear FET models for intermodulation analysis

   Författare :Klas Yhland; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gate mixer; drain mixer; FET mixer; HFET model; HEMT model; resistive mixer; intermodulation; MESFET model; FET model;

   Sammanfattning : .... LÄS MER

4. 3. Silicon Carbide Microwave Devices

   Författare :Joakim Eriksson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

   Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

5. 4. Microwave and Millimeter-Wave Monolithic Integrated Circuits in CMOS and GaAs-mHEMT Technologies

   Författare :Bahar M. Motlagh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; power divider; double-slot antenna; 60 GHz; millimeter-wave; GaAs-mHEMT; CMOS integrated circuits; antenna integration; noise measurement; 100 nm mHEMT technology; balun; capacitor; microstrip line; single-ended; 90 nm CMOS technology; single-balanced; resistive mixer; 210 GHz;

   Sammanfattning : The objective of this work has been to design and characterize microwave and millimeter-wave components and circuits within a 90 nm Si-CMOS process and a 100 nm GaAs-mHEMT process. The work is divided in two parts depending on the technology. LÄS MER

7. 5. Monolithic Micro- and Millimeter-wave Integrated Circuits in 90 nm CMOS Technology

   Författare :Bahar M. Motlagh; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; power divider; CMOS integrated circuits; 90 nm CMOS technology; 60 GHz; microstrip line; Si-MMIC; capacitor; balun; millimeter wave; resistive mixer;

   Sammanfattning : The objective of this work has been to design and characterize microwave components and circuits within a 90 nm RF-CMOS process.The work has been divided into two parts: integration of passive components and design and characterization of several mixer circuits. LÄS MER