Sökning: "material med hög densitet"
Visar resultat 16 - 20 av 21 avhandlingar innehållade orden material med hög densitet.
16. U-Pb baddeleyite geochronology of Precambrian mafic dyke swarms and complexes in southern Africa - regional scale extensional events and the origin of the Bushveld Complex
Sammanfattning : Dolerite dykes are formed when iron- and magnesium-rich (mafic) mantle-derived magmas ascend through the lithosphere (upper part of the mantle) and crystallize as ‘hydro-fractures’ within the crust. Dykes may exist in great numbers to form dyke swarms (linear or radiating), which can be linked to time periods of continental break-up, or attempted break-up events, associated with voluminous volcanism. LÄS MER
17. BMP implants in bone formation. Studies in rabbits and rats
Sammanfattning : Bone morphogenic proteins, BMPs, are a group endogenous proteins that are highly conserved through evolution. The amino acid sequences of about 15 different BMPs are now known and recombinant human BMPs are commercially available. Implantation of an individual BMP protein is sufficient to induce bone formation even at a subcutaneous site. LÄS MER
18. Adsorption of biopolymers and their layer-by-layer assemblies on hydrophilic surfaces
Sammanfattning : It is widely known that surfaces play an important role in numerous biological processes and technological applications. Thus, being able to modify surface properties provides an opportunity to control many phenomena occurring at interfaces. LÄS MER
19. Inside Pulsating White Dwarfs: Clues from time-resolved spectroscopy
Sammanfattning : Several analyses using time-resolved optical spectrocopy of pulsating white dwarfs are presented. The data have been put to a number of uses. First, line-of-sight velocities associated with the pulsations have been measured in three hydrogen-atmosphere white dwarfs (DAVs), bringing the total number of such measurements up to five. LÄS MER
20. Vertical Nanowire High-Frequency Transistors
Sammanfattning : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. LÄS MER