Sökning: "bryta upp och börja om"

Visar resultat 6 - 8 av 8 avhandlingar innehållade orden bryta upp och börja om.

  1. 6. A Study of Biomass Combustion Problems and the Selective Catalytic Oxidation of Ammonia

    Författare :Göran Olofsson; Kemiska institutionen; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Chemical technology and engineering; Kemiteknik och kemisk teknologi; Energy research; Reaction mechanism; Ammonia degradation; Pt CuO Al2O3 Catalysts; SCO; Selective Catalytic Oxidation; Catalytic hot gas cleaning; Bed agglomeration; NOx emissions; Fluidised bed; Biomass combustion; Biogas; Energiforskning;

    Sammanfattning : Increasing awareness of the need of reducing CO2, NOx and SOx emissions from combustion systems has led to a strong interest in biomass as a fuel source. Using it in combination with fluidised bed combustion technology can lead to a lowering of NOx emissions to the atmosphere. LÄS MER

  3. 7. Secretory Leukocyte Protease Inhibitor (SLPI) in the gastrointestinal tract in man

    Författare :Max Nyström; Malmö Institutionen för kliniska vetenskaper; []
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Surgery; elastase inhibitors; human leukocyt proteases; Plasma protease inhibitors; NGAL; Ulcerative colitis; Antileukoprotease; IBD; traumatologi; ortopedi; traumatology; orthopaedics; Immunology; serology; transplantation; Immunologi; serologi; Kirurgi;

    Sammanfattning : Secretory leukocyte protease inhibitor is a 11.7 kDa acid stable serine protease inhibitor. SLPI has been shown to be the dominant protease inhibitor in bronchial secretions and has been used in treatment of pulmonary emphysema. LÄS MER

  4. 8. Chloride-based Silicon Carbide CVD

    Författare :Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

    Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER