Sökning: "Anne Henry"
Visar resultat 1 - 5 av 6 avhandlingar innehållade orden Anne Henry.
1. Chemical Vapour Deposition of sp2 Hybridised Boron Nitride
Sammanfattning : The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp2 hybridised Boron Nitride (sp2-BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. LÄS MER
2. Simulations of Silicon Carbide Chemical Vapor Deposition
Sammanfattning : Most of the modern electronics technology is based on the semiconducting material silicon. The increasing demands for smaller electronic devices with improved performance at lower costs drive the conventional silicon technology to its limits. LÄS MER
3. CVD Growth of Silicon Carbide for High Frequency Applications
Sammanfattning : Silicon Carbide (SiC) is an important wide band gap semiconductor with outstanding electronic properties. With figures of merit far better than silicon, SiC is believed to replace and outcompete silicon in many applications using high frequencies, high voltage and high temperatures. LÄS MER
4. Advances in SiC growth using chloride-based CVD
Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. LÄS MER
5. Chloride-based Silicon Carbide CVD
Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER
