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Hittade 5 avhandlingar som matchar ovanstående sökkriterier.

  1. 1. Junction barrier schottky rectifiers in silicon carbide

    Författare :Fanny Dahlquist; KTH; []
    Nyckelord :Silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifieer; Power rectifier; Unipolar devices; Punch-through design;

    Sammanfattning : .... LÄS MER

  3. 2. Junction Barrier Schottky Rectifiers in Silicon Carbide

    Författare :Fanny Dahlquist; KTH; []
    Nyckelord :silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifier; MPS rectifier; power rectifier; punch-through design; power loss; high blocking voltage;

    Sammanfattning : .... LÄS MER

  4. 3. Design and Fabrication of Silicon Carbide RF MOSFET for L- and S-band applications

    Författare :Gudjon Gudjonsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Metal-Oxide-Semiconductor Field-Effect-Transistor MOSFET ; 4H-SiC; Silicon Carbide SiC ;

    Sammanfattning : This thesis describes realisation of 4H-SiC radio-frequency metal-oxide-semiconductor field effect transistors (RF MOSFETs). Such transistors are in principle very attractive devices for high power and high frequency electronics. They are intended as a direct replacement for their silicon counterparts, offering higher power. LÄS MER

  5. 4. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  7. 5. SiC Varactors for Dynamic Load Modulation of Microwave Power Amplifiers

    Författare :Christer Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear characterization; varactors; active load-pull; power; microwave; amplifier; dynamic load modulation; SiC; energy efficiency;

    Sammanfattning : The rapid consumer adoption of mobile services is leading to an exponential growth in wireless data traffic. In order to accommodate more concurrent high data-rate users, the required complexity of transmitting radio base station (RBS) power amplifiers (PAs) is increasing. LÄS MER