Sökning: "power device"

Visar resultat 1 - 5 av 370 avhandlingar innehållade orden power device.

  1. 1. Microwave power device characterization

    Författare :Kristoffer Andersson; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

    Sammanfattning : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. LÄS MER

  2. 2. Simulation and Optimization of SiC Field Effect Transistors

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Kent Bertilsson; Mittuniversitetet.; KTH.; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik; SiC; MOSFET; MESFET; Thermal Effects; Device modeling; Optimization; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik; Electronics; Device simulation; RF; power; Elektronik;

    Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER

  3. 3. Device-to-Device Communication in Future Cellular Networks Resource allocation and mode selection

    Detta är en avhandling från Kungliga Tekniska högskolan

    Författare :Demia Della Penda; KTH.; [2018]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wireless communication; cellular networks; device to device; resource management; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The widespread use of smart devices and mobile applications is leading to a massive growth of wireless data traffic. Supporting the upcoming demands of data volume, communication rate, and system capacity requires reconsideration of the existing network architecture. LÄS MER

  4. 4. High power bipolar junction transistors in silicon carbide

    Detta är en avhandling från Stockholm : KTH

    Författare :Hyung-Seok Lee; KTH.; [2005]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

  5. 5. Electro-thermal simulations and measurements of silicon carbide power transistors

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Wei Liu; KTH.; [2004]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; silicon carbide; power device; metal semiconductor field-effect transistor; bipolar junction transistor; electro-thermal simulation; Elektronik; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER