Sökning: "SiGe HBT"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden SiGe HBT.

  1. 1. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

    Författare :Staffan Bruce; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER

  3. 2. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

    Författare :Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

    Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER

  4. 3. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

    Författare :B. Gunnar Malm; KTH; []
    Nyckelord :Silicon-Germanium SiGe ; heterojunction bipolar transistor HBT ; low-frequency noise; high-frequency noise; harmonic distortion; linearity; device simulation; collector profile; epitaxial base integration; radio frequency RF ; radio frequency inte;

    Sammanfattning : .... LÄS MER

  5. 4. Wideband integrated circuits for optical communication systems

    Författare :Stavros Giannakopoulos; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; optical interconnects; SiGe HBT; receiverfront-end; VCSEL driver; wideband amplifiers; data communication; InP DHBT; TIA; distributed amplifiers.;

    Sammanfattning : The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. LÄS MER

  7. 5. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

    Författare :Johan Pejnefors; KTH; []
    Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

    Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER