Sökning: "in situ doping"

Visar resultat 1 - 5 av 43 avhandlingar innehållade orden in situ doping.

1. 1. Doping of Semiconductor Nanowires

   Författare :Jesper Wallentin; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; III-V semiconductor materials; nanowires; doping; solar cells; F:2013:Wallentin;

   Sammanfattning : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. LÄS MER

3. 2. Controlling Electronic and Geometrical Structure of Honeycomb-Lattice Materials Supported on Metal Substrates : Graphene and Hexagonal Boron Nitride

   Författare :Nikolay Vinogradov; Nils Mårtensson; Karsten Horn; Uppsala universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; graphene; h-BN; electronic structure; adsorption; doping; nano-templates; PES; NEXAFS; LEEM; STM; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

   Sammanfattning : The present thesis is focused on various methods of controlling electronic and geometrical structure of two-dimensional overlayers adsorbed on metal surfaces exemplified by graphene and hexagonal boron nitride (h-BN) grown on transition metal (TM) substrates. Combining synchrotron-radiation-based spectroscopic and various microscopic techniques with in situ sample preparation, we are able to trace the evolution of overlayer electronic and geometrical properties in overlayer/substrate systems, as well as changes of interfacial interaction in the latter. LÄS MER

4. 3. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

   Författare :Andrea Troian; NanoLund: Centre for Nanoscience; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

   Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER

5. 4. Towards quinone/pEDOT conducting redox polymers as energy storage materials

   Författare :Huan Wang; Martin Sjödin; Xavier Crispin; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; quinone; conducting redox polymer; doping; capacity; organic battery; polymerization;

   Sammanfattning : With the increased demand for electrical energy storage devices, e.g. electric vehicles and smart grids, organic batteries have caught increasing attention due to their advantages, such as sustainability, environmental friendliness and cheap raw materials over traditional inorganic energy storage materials. LÄS MER

7. 5. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

   Författare :Johan Pejnefors; KTH; []
   Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

   Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER