Sökning: "Auger effect"

Visar resultat 1 - 5 av 41 avhandlingar innehållade orden Auger effect.

1. 1. Nuclear Dynamics in X-ray Absorption and Raman Scattering

   Författare :Ivaylo Minkov; Faris Gelmukhanov; Knut Borve; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; x-ray scattering; theory; simulations; recoil; Doppler effect; nuclear dynamics; Auger; XPS; Theoretical chemistry; Teoretisk kemi;

   Sammanfattning : This thesis presents theoretical studies of several x-ray spectroscopies - x-ray absorption, x-ray photoelectron emission, radiative and non-radiative resonant Raman scattering spectroscopy. The main focus point is investigating the influence of nuclear dynamics on these spectra for a variety of small molecules - naphthalene, biphenyl, ethylene, the water dimer, HCl, CO. LÄS MER

3. 2. Molecular electronic,  vibrational and rotational motion in optical and x-ray fields

   Författare :Sergey Gavrilyuk; Faris Gelmukhanov; Stephane Carniato; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; x-ray; nonlinear optics; photobleaching; recoil; anisotropy; Auger; Chemical physics; Kemisk fysik;

   Sammanfattning : The subject of this theoretical  study is the role ofelectronic structure as well as of rotational and vibrational motionson interactions between molecules and electromagnetic radiation,ranging from optical to x-ray. The thesis concerns both linear and nonlinear regimes of the light-matter interaction. LÄS MER

4. 3. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

   Författare :Yu Cao; Chalmers tekniska högskola; []
   Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

   Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER

5. 4. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

   Författare :Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

   Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER

7. 5. Theoretical perspectives on ultrafast and non-linear spectroscopy

   Författare :Emil Vinas Boström; Matematisk fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Non-linear optics; Ultrafast dynamics; Non-equilibrium Green s functions; Density functional theory; Multi-photon absorption; Second harmonic generation; Desorption dynamics; Auger decay; Charge-separation dynamics; Quantum Zeno effect; Fysicumarkivet A:2018:Vinas Boström;

   Sammanfattning : In this thesis we discuss a theoretical description of ultrafast and non-linear spectroscopy. Due to the high intensities and ultrashort pulse durations involved in such experiments, it is necessary to use an explicitly time-dependent formalism. LÄS MER