Sökning: "epitaxial base integration"
Hittade 4 avhandlingar innehållade orden epitaxial base integration.
1. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors
Sammanfattning : .... LÄS MER
2. Process integration issues for high-performance bipolar technology
Sammanfattning : The work in this thesis has been focused on processintegration issues for high-performance bipolar technologyincluding experimental work on self-aligned silicides,ion-implanted andin situdoped polysilicon emitters, strained silicongermanium for heterojunction bipolar transistors and physicalprocess and device simulation.Key issues for the self-aligned silicidation of small devicefeatures such as the influence of dopants, silicon morphologyand line width on titanium disilicide formation, phasetransformation and temperature stability, have been addressed. LÄS MER
3. Device design and process integration for SiGeC and Si/SOI bipolar transistors
Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER
4. Tunneling Based Electronic Devices
Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER