Sökning: "InAs InP"

Visar resultat 11 - 15 av 52 avhandlingar innehållade orden InAs InP.

  1. 11. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

    Författare :Henric Åsklund; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

    Sammanfattning : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. LÄS MER

  3. 12. Photoelectron spectroscopy on III-V semiconductors : valence bands, core levels and core excitons

    Författare :Henric Oscarsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InP 110 :As; surface; InAs; valence band; MBE; photoelectron spectroscopy; core level; core exciton; semiconductor; GaAs 111 A;

    Sammanfattning : .... LÄS MER

  4. 13. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER

  5. 14. Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures

    Författare :Magnus Borgström; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum transport; resonant tunneling diodes; relativity; quantum mechanics; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; gravitation; statistisk fysik; termodynamik; classical mechanics; Mathematical and general theoretical physics; whiskers; ultra high vacuum chemical vapor deposition; RTD; self assembled quantum dots; semiconducting III-V materials; nanowires; metalorganic vapor phase epitaxy; MOVPE; nanostructures; AFM; Atomic force microscopy; InAs; Fysicumarkivet A:2003:Borgström;

    Sammanfattning : This thesis deals with the growth, processing and characterization of nano-sized structures, eg., self-assembled quantum dots and nano-wires. LÄS MER

  7. 15. Electron Transport in Nanowire Quantum Devices

    Författare :Henrik Nilsson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Superconductivity; Spin-orbit coupling; the Kondo effect; the Zeeman effect; Quantum dots; Nanowire memories; Nanowire transistors; InSb; InAs; Nanowires; Electron transport; Andreev reflections; Nanowire RF-SET; Noise in nanowires;

    Sammanfattning : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. LÄS MER