Sökning: "InAs InP"

Visar resultat 6 - 10 av 52 avhandlingar innehållade orden InAs InP.

  1. 6. Charge transport in III-V narrow bandgap semiconductor nanowires

    Författare :Bekmurat Dalelkhan; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InSb; InP-InAs; narrow bandgap; spin-orbit interaction; quantum dots; Nanowires; Fysicumarkivet A:2019:Dalelkhan;

    Sammanfattning : This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires. According to the type of transport mechanism dominating in the devices, this thesis can be divided into four parts. LÄS MER

  3. 7. Novel Processing and Electrical Characterization of Nanowires

    Författare :Kristian Storm; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Gate; Capacitance; Hall effect; InP; InAs; Characterization; Nanowires; Processing; LED; Transistor; Fysicumarkivet A:2013:Storm;

    Sammanfattning : This thesis investigates novel electrical nanowire characterization tools and devices. Conventional characterization methods, long available to bulk semiconductor samples, have been adapted and transferred to the nanowire geometry. LÄS MER

  4. 8. Optical Spectroscopy of Single Nanowires

    Författare :Johanna Trägårdh; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; core-shell nanowires; GaAs; InP; InAs; photocurrent; nanowire; time-resolved PL; photoluminescence; wurtzite;

    Sammanfattning : This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grown by metal-organic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). LÄS MER

  5. 9. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires

    Författare :David Göransson; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; InAsP-InP core-shell nanowire; InP-InAs core-shell nanowire; strain; XRD; charge transport; Coulomb blockade; Josephson junction; Fysicumarkivet A:2019:Göransson;

    Sammanfattning : The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding wire shaped crystals(nanowires) having a length of ~ 1 μm and diameter of ~ 100 nm. LÄS MER

  7. 10. Ion beam etching of InP based materials

    Författare :Carl-Fredrik Carlström; KTH; []
    Nyckelord :InP; dry etching; ion beam etching; RIBE; CAIBE; hydrocarbon chemistry; trimethylamine; As P exchange reaction; morphology; low damage; AFM; SCM; annealing;

    Sammanfattning : Dry etching is an important technique for pattern transferin fabrication of most opto-electronic devices, since it canprovide good control of both structure size and shape even on asub-micron scale. Unfortunately, this process step may causedamage to the material which is detrimental to deviceperformance. LÄS MER