Sökning: "InAs AlSb"

Visar resultat 1 - 5 av 9 avhandlingar innehållade orden InAs AlSb.

  1. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Författare :Malin Borg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER

  3. 2. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER

  4. 3. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. LÄS MER

  5. 4. Self-Switching Diodes for Zero-Bias Terahertz Detection

    Författare :Andreas Westlund; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; self-switching diode; noise-equivalent power; SSD; graphene; zero-bias; InAs; InGaAs; terahertz; detector;

    Sammanfattning : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. LÄS MER

  7. 5. Heterostructure Diodes for Millimeter Wave Power Generation

    Författare :Hans Grönqvist; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Single barrier varactor diode; AlSb barrier; InAs substrate; high frequencies; Resonant Tunneling Diode;

    Sammanfattning : This thesis deals with two types of heterostructure diodes namely the Resonant Tunneling Diode (RTD) and the Single barrier varactor diode (SBV). The RTD is a device for high frequency generation either as a negative reistance oscillators or as a multiplier. Different means to reach high frequencies are outlined. LÄS MER