Sökning: "InAs InP"

Visar resultat 21 - 25 av 52 avhandlingar innehållade orden InAs InP.

1. 21. Vertical Nanowire High-Frequency Transistors

   Författare :Sofia Johansson; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

   Sammanfattning : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. LÄS MER

3. 22. Electronic Structure Calculations of Point Defects in Semiconductors

   Författare :Andreas Höglund; Susanne Mirbt; Alison Mainwood; Uppsala universitet; []
   Nyckelord :Physics; electronic structure calculations; point defects; semiconductor; formation energy; equilibrium solubility limit; thermodynamic equilibrium concentration; transfer levels; negative-U; 110 surface; diffusion; activation energy; solar cells; Fysik;

   Sammanfattning : In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. LÄS MER

4. 23. Studies of Novel Nanostructures by Cross- sectional Scanning Tunneling Microscopy

   Författare :Lassana Ouattara; Synkrotronljusfysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Dilute ferromagnetic semiconductors Superlattices; Cross-sectional scanning tunneling microscopy; Semiconductor nanostructures; Fysik; Physics; Epitaxy; Quantum dots; Nanowires;

   Sammanfattning : This thesis presents structural and morphological studies of semiconductor nanostructures, namely quantum dots, nanowires and a dilute ferromagnetic semiconductor. These nanostructures are investigated on the atomic scale using cross-sectional scanning tunneling microscopy (XSTM). LÄS MER

5. 24. Development of new characterization techniques for III-V nanowire devices

   Författare :Olof Persson; Synkrotronljusfysik; []
   Nyckelord :STM; XPS; Semiconductor nanowires; nanowire devices; top contact mode; HAXPES; Fysicumarkivet A:2017:Persson;

   Sammanfattning : This dissertation presents the new methods and techniques developed to investigate the properties of nanowires (NWs) and NW devices and the results obtained using these methods. The growth and characterization of NWs have become a large research field because NWs have been shown to improve the properties of many semiconductor applications such as transistors, solar cells, and light emitting diodes. LÄS MER

7. 25. Compound semiconductor materials and processing technologies for photonic devices and photonics integration

   Författare :Carl Reuterskiöld Hedlund; Mattias Hammar; Mikael Östling; Sebastian Lourdudoss; Harri Lipsanen; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e. LÄS MER