Sökning: "movpe"

Visar resultat 11 - 15 av 33 avhandlingar innehållade ordet movpe.

1. 11. Nanoscale Crystal Growth: The Importance of Interfaces and Phase Boundaries Kristallväxt på Nanometer Skala: Vikten av Ytor och Gränser

   Författare :Brent Wacaser; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; kristallografi; fasjämvikt; Semiconductory physics; Halvledarfysik; thermal and mechanical properties; crystallography; phase equilibria; Kondenserade materiens egenskaper:struktur; egenskaper termiska och mekaniska ; Condensed matter:stucture; Fysik; Physics; epitaxy; VLS; MOVPE; CBE; nanostructures; crystal growth; nanowires; III-V semiconductors; growth mechanism; MBE; Material technology; Materiallära; materialteknik;

   Sammanfattning : Surfaces and interfaces have a special significance to nanotechnology because the surface/volume ratio of nanomaterials is larger than for bulk materials. Therefore, interfaces of nanomaterials are usually more important to the properties of nanomaterials than for larger scale materials. LÄS MER

3. 12. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

4. 13. Epitaxial growth, processing and characterisation of III-V semiconductor micro- and nanostructures

   Författare :Otto Zsebök; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; micromapping; MBE; dry etching; III-V semiconductor; processing; alternative precursor; SEM; photoluminescence; quantum wire; self-narrowing etching; wet chemical etching; MOVPE;

   Sammanfattning : .... LÄS MER

5. 14. Metall organic vapour phase epitaxy for advanced III-V devices

   Författare :Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER

7. 15. New and safe MOVPE processes for InP based devices

   Författare :Dietmar Keiper; KTH; []
   Nyckelord :;

   Sammanfattning : .... LÄS MER