Sökning: "InGaAs"

Visar resultat 1 - 5 av 50 avhandlingar innehållade ordet InGaAs.

  1. 1. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Författare :Malin Borg; [2007]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER

  2. 2. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes

    Författare :Andreas Westlund; [2013]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InGaAs; slot diode; self-switching diode; zero-bias diode;

    Sammanfattning : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. LÄS MER

  3. 3. Self-Switching Diodes for Zero-Bias Terahertz Detection

    Författare :Andreas Westlund; [2015]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; self-switching diode; noise-equivalent power; SSD; graphene; zero-bias; InAs; InGaAs; terahertz; detector;

    Sammanfattning : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. LÄS MER

  4. 4. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Detta är en avhandling från Department of Electrical and Information Technology, Lund University

    Författare :Jun Wu; Lunds universitet.; Lund University.; [2016]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Sammanfattning : Popular Abstract in English Since 1947 when the first transistor was invented, electronics was transited into an unprecedented era. Different from a resistor that only has two terminals with the applied voltage and flowing current always obeying Ohm's law, a transistor has the third terminal in between, called "gate", which is made by, for metal-oxide-semiconductor field effect transistors (MOSFETs), an oxide layer sandwiched between the metal electrode and the semiconductor channel. LÄS MER

  5. 5. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators

    Detta är en avhandling från Department of Electrical and Information Technology, Lund University

    Författare :Göran Adolfsson; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; single mode laser; transfer matrix method; threshold current; InGaAs; GaAs; multiple quantum wells; dilute nitrides; two-color laser; GaInNAs; Semiconductor lasers; molecular beam epitaxy; characteristic temperature; temperature dependence; ambipolar diusion; Fabry-Perot resonator; spectral engineering;

    Sammanfattning : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). LÄS MER