Sökning: "InGaAs"

Visar resultat 1 - 5 av 74 avhandlingar innehållade ordet InGaAs.

  1. 1. InGaAs Nanowire and Quantum Well Devices

    Författare :Lasse Södergren; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

    Sammanfattning : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. LÄS MER

  3. 2. Radio Frequency InGaAs MOSFETs

    Författare :Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

    Sammanfattning : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. LÄS MER

  4. 3. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Författare :Malin Borg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Sammanfattning : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. LÄS MER

  5. 4. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes

    Författare :Andreas Westlund; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InAs; InGaAs; slot diode; self-switching diode; zero-bias diode;

    Sammanfattning : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. LÄS MER

  7. 5. Self-Switching Diodes for Zero-Bias Terahertz Detection

    Författare :Andreas Westlund; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; self-switching diode; noise-equivalent power; SSD; graphene; zero-bias; InAs; InGaAs; terahertz; detector;

    Sammanfattning : The self-switching diode (SSD) has been investigated as a potential terahertz detector in recent years. The SSD accomplishes a non-linear current-voltage relation through a field-effect, which enables detection at zero bias from microwave up to terahertz frequencies. In this work, SSDs were realised in two new materials; InAs and graphene. LÄS MER