Sökning: "movpe"
Visar resultat 21 - 25 av 33 avhandlingar innehållade ordet movpe.
21. Doping of Semiconductor Nanowires
Sammanfattning : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. LÄS MER
22. Block Copolymer Lithography. Applications for Sub-50 nm High-Density Nanostructures
Sammanfattning : As high technology device functionalities seem to constantly be moving towards decreasing critical dimensions and increasing density, there is a need for lithography research to move in the same direction. Block copolymer (BCP) lithography is a promising technique, which has single-digit nanometer resolution, typically has a pattern periodicity of 10-50 nm, and easily scales up the patterned area at a low cost. LÄS MER
23. III-V Nanowire Solar Cells: Growth and Characterization
Sammanfattning : To mitigate dangerous climate change, a transition to a new and sustainable energy system is needed. In this system, solar energy will need to be a key player. Prices of electricity made from solar cells have declined rapidly over the recent decades, making solar energy competitive in more markets. LÄS MER
24. Design and fabrication of multiple quantum well structures for long wavelength laser diodes
Sammanfattning : InGaAsP multiple quantum well (MQW) structures emitting at1300 nm have been designed, fabricated with metal organicvapour phase epitaxy (MOVPE) and evaluated by x-ray diffraction(XRD), photoluminescence (PL) and by laser characterisation. Inaddition the structures were subject to scanning probemicroscopy (STM/AFM) and direct carrier transport measurements. LÄS MER
25. Compound semiconductor materials and processing technologies for photonic devices and photonics integration
Sammanfattning : The advancement of semiconductor optoelectronics relies extensively on materials and processing technologies of ever-increasing sophistication, such as nanometer-range lithography, epitaxial growth methods with monatomic layer control, and anisotropic etching procedures that allows for the precise sculpturing of device features even in the limit of extreme aspect ratios. However, upcoming application needs puts requirements on optimized designs or device performances, e. LÄS MER