Sökning: "epitaxial uniformity"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden epitaxial uniformity.

1. 1. Metall organic vapour phase epitaxy for advanced III-V devices

   Författare :Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. LÄS MER

3. 2. CVD solutions for new directions in SiC and GaN epitaxy

   Författare :Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

   Sammanfattning : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. LÄS MER

4. 3. Fluorinated SiC CVD

   Författare :Pontus Stenberg; Erik Janzén; Henrik Pedersen; Angel Yanguas-Gil; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. LÄS MER

5. 4. Structural and Electronic Properties of Graphene on 4H- and 3C-SiC

   Författare :Chamseddine Bouhafs; Vanya Darakchieva; Rozitsa Yakimova; Ivan Gueorguiev Ivanov; Jacek Baranowski; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : Graphene is a one-atom-tick carbon layer arranged in a honeycomb lattice. Graphene was first experimentally demonstrated by Andre Geim and Konstantin Novoselov in 2004 using mechanical exfoliation of highly oriented pyrolytic graphite (exfoliated graphene flakes), for which they received the Nobel Prize in Physics in 2010. LÄS MER

7. 5. Novel Materials and Technologies for IR Optoelectronic Applications

   Författare :Yuxin Song; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; GaSbBi; dilute bismide; InAs GaSb type-II superlattice; metamorphic; InSbBi; alloy graded buffer; threading dislocation; infrared; molecular beam epitaxy;

   Sammanfattning : This thesis focuses on novel III-V materials (InAs/GaSb type-II superlattices, T2SL, and dilute bismides) and metamorphic growth techniques for infrared optoelectronics all of which may find wide spread applications in telecommunication, energy harvesting and saving, sensing and imaging. Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) photodetectors at the atmospheric windows of 3-5 and 8-12 µm, respectively, are currently dominated by HgCdTe and quantum well infrared photodetectors. LÄS MER