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Visar resultat 21 - 25 av 138 avhandlingar som matchar ovanstående sökkriterier.

1. 21. Silicon and Quartz Microengineering : Processing and Characterisation

   Författare :Örjan Vallin; Peter Enoksson; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Engineering physics; silicon; quartz; microengineering; microstructure; MEMS; wafer bonding; direct bonding; adhesion quantification; Teknisk fysik; Engineering physics; Teknisk fysik;

   Sammanfattning : Microengineering has developed a broad range of production techniques to reduce size, increase throughput, and reduce cost of electrical and mechanical devices. The miniaturisation has also entailed entirely new opportunities. LÄS MER

3. 22. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

   Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

4. 23. Electrical Characterization of Novel Insulators in Metal-Insulator-Semiconductor Structures

   Författare :Anders Jauhiainen; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon dioxide; MOS; Fowler-Nordheim injection; charge transport; MIS; wafer bonding; polycrystalline diamond; capacitance;

   Sammanfattning : This thesis comprises seven papers (A-G) and an extended introduction which puts them into context within a broader field of research. The papers deal with the electrical characterization of some different insulators and interfaces encountered within the realm of silicon based microelectronics. LÄS MER

5. 24. Germanium layer transfer and device fabrication for monolithic 3D integration

   Författare :Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

   Sammanfattning : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. LÄS MER

7. 25. Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing

   Författare :Markus Forsberg; Jörgen Olsson; Jyrki Molarius; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; chemical mechanical polishing; chemical mechanical planarization; silicon; silicon dioxide; front end; shallow trench isolation; deep trench isolation; bipolar transistor; BiCMOS; wafer bonding; Elektronik; Electronics; Elektronik;

   Sammanfattning : Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silicon CMP process. LÄS MER