Sökning: "limiting behavior"

Visar resultat 26 - 30 av 75 avhandlingar innehållade orden limiting behavior.

  1. 26. Microstructure of Zirconium Alloys Oxidized in Steam

    Författare :Pia Tejland; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; EDX; ADF; TEM; Zircaloy-2; FIB-SEM; STEM; GD-OES; SPP; SEM; Zirconium; HAADF;

    Sammanfattning : Zirconium alloys are widely used in nuclear reactors as fuel cladding tubes because of their low thermal neutron capture cross-section, good corrosion properties and satisfactory mechanical properties. However, the main limiting factor of these materials is the oxidation behavior. LÄS MER

  3. 27. Narratives of energy incumbents - Unravelling perspectives on municipal electric utilities

    Författare :Maria Altunay; Chalmers tekniska högskola; []
    Nyckelord :SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; innovation; business model choice; Solar PV; interaction; niche-regime interaction; business relationships; dichotomy.;

    Sammanfattning : The dominant narrative in sustainability transitions studies frames electric utilities as incumbents and “villains” who hinder the diffusion of niche innovations (Johnstone et al., 2017; Turnheim and Sovacool, 2020). LÄS MER

  4. 28. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Författare :Johan Bergsten; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER

  5. 29. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

    Författare :Sang Kwon Lee; KTH; []
    Nyckelord :Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

    Sammanfattning : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. LÄS MER

  7. 30. Is time money? Philosophical perspectives on the monetary valuation of travel time

    Författare :Maria Nordström; Karin Edvardsson Björnberg; Erik Angner; KTH; []
    Nyckelord :HUMANIORA; HUMANITIES; value of travel time; value of time; travel time; mobil- ity; urban transportation; Filosofi; Philosophy;

    Sammanfattning : This licentiate thesis consists of an introduction (‘kappa’) and three papers discussing various aspects of time as a commodity and the practice of valuing travel time.The first paper is an analysis of the properties of time as an economic resource taking into account literature on behavior with regard to time. LÄS MER