Sökning: "ohmic and schottky contacts"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden ohmic and schottky contacts.

1. 1. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

   Författare :Sang-Kwon Lee; KTH; []
   Nyckelord :silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

   Sammanfattning : .... LÄS MER

3. 2. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

4. 3. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

   Författare :S. A. Perez-Garcia; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

   Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER

5. 4. Thermally stable electrical contacts to 6H silicon carbide

   Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER

7. 5. Study of novel electronic materials by mid-infrared and terahertz optical Hall effect

   Författare :Nerijus Armakavicius; Vanya Darakchieva; Philipp Kühne; Mircea Modreanu; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Sammanfattning : Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. LÄS MER