Sökning: "infrared photodetectors"
Visar resultat 1 - 5 av 19 avhandlingar innehållade orden infrared photodetectors.
1. III-V Nanowire-based Infrared Photodetectors : Design, Fabrication and Characterization
Sammanfattning : Semiconductors are the backbone of almost every electrical or optical component, one of them being photodetectors. Photodetectors are used in many applications such as digital cameras or solar panels. They can also be designed to detect the omnipresent infrared radiation, discovered in 1800, which is invisible to human eye. LÄS MER
2. Infrared Photodetectors based on Nanowire Arrays with Embedded Quantum Heterostructures
Sammanfattning : Optical sensors operating in the infrared range of the electromagnetic spectrum are key components in a variety ofapplications including optical communication, night vision, medical diagnosis, surveillance, and astronomy.Semiconductor nanowires have great potential for realizing broadband infrared photodetectors with excellentresponsivity, low dark current and low noise, and a unique compatibility with commercial silicon-based electronics. LÄS MER
3. Type-II interband quantum dot photodetectors
Sammanfattning : Photon detectors based on single-crystalline materials are of great interest for high performance imaging applications due to their low noise and fast response. The major detector materials for sensing in the long-wavelength infrared (LWIR) band (8-14 µm) are currently HgCdTe (MCT) and AlGaAs/GaAs quantum wells (QW) used in intraband-based quantum-well infrared photodetectors (QWIPs). LÄS MER
4. Near-infrared photodetectors based on Si/SiGe nanostructures
Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER
5. Infrared Photodetectors based on InSb and InAs Nanostructures via Heterogeneous Integration-Rapid Melt Growth and Template Assisted Selective Epitaxy
Sammanfattning : Monolithic heterogeneous integration of III-V semiconductors with the contemporary Si Complementary Metal Oxide Semiconductor (CMOS) technology has instigated a wide range of possibilities and functionalities in the semiconductor industry, in the field of digital circuits, optical sensors, light emitters, and high-frequency communication devices. However, the integration of III-V semiconductors is not trivial due to the differences in lattice parameters, polarity, and thermal expansion coefficient. LÄS MER