Sökning: "high responsivity"
Visar resultat 1 - 5 av 25 avhandlingar innehållade orden high responsivity.
1. Silicon Carbide High Temperature Photodetectors and Image Sensor
Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER
2. Infrared Photodetectors based on Nanowire Arrays with Embedded Quantum Heterostructures
Sammanfattning : Optical sensors operating in the infrared range of the electromagnetic spectrum are key components in a variety ofapplications including optical communication, night vision, medical diagnosis, surveillance, and astronomy.Semiconductor nanowires have great potential for realizing broadband infrared photodetectors with excellentresponsivity, low dark current and low noise, and a unique compatibility with commercial silicon-based electronics. LÄS MER
3. Ultrasensitive Cold-Electron Bolometer
Sammanfattning : The Cold-Electron Bolometer (CEB) is an ultrasensitive device designed for the detection of cosmic microwave background radiation. The key to its sensitivity is the electron cooling of the absorber by the superconductor-insulator-normal metal (SIN) tunnel junction. LÄS MER
4. Near-infrared photodetectors based on Si/SiGe nanostructures
Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER
5. Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes
Sammanfattning : Two novel types of diodes for emission and detection of THz radiation have been investigated. The diodes are based on high electron mobility III-V heterostructures. Both diodes are aimed for room-temperature operation, for which there is a demand for new THz technology. For emission, slot diodes based on an InGaAs heterostructure were studied. LÄS MER