Sökning: "InGaSb"
Hittade 2 avhandlingar innehållade ordet InGaSb.
1. Type-II interband quantum dot photodetectors
Sammanfattning : Photon detectors based on single-crystalline materials are of great interest for high performance imaging applications due to their low noise and fast response. The major detector materials for sensing in the long-wavelength infrared (LWIR) band (8-14 µm) are currently HgCdTe (MCT) and AlGaAs/GaAs quantum wells (QW) used in intraband-based quantum-well infrared photodetectors (QWIPs). LÄS MER
2. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
Sammanfattning : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. LÄS MER