Visar resultat 1 - 5 av 162 avhandlingar innehållade ordet nanowire.
Sammanfattning : In this thesis, we demonstrate that a disordered superconductor with a high kinetic inductance can realize a low microwave loss, non-dissipative circuit element with an impedance greater than the quantum resistance (Rq = h/4e^2 = 6.5kΩ). LÄS MER
Sammanfattning : This dissertation deals with the geometric and electronic structure of surfaces on III–V semiconductor nanowires (NWs). NWs made of InAs, GaAs, and InP have been studied using scanning tunneling microscopy/spectroscopy (STM/S), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and x-ray photoelectron spectroscopy (XPS). LÄS MER
Sammanfattning : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. LÄS MER
Sammanfattning : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. LÄS MER
Sammanfattning : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. LÄS MER