Sökning: "III-V semiconductors"

Visar resultat 21 - 25 av 59 avhandlingar innehållade orden III-V semiconductors.

  1. 21. Electronic structure calculations of native defects and impurities in III-V semiconductors

    Författare :Andreas Höglund; Uppsala universitet; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  3. 22. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Författare :Jun Wu; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Sammanfattning : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. LÄS MER

  4. 23. III-V Nanowire-based Infrared Photodetectors : Design, Fabrication and Characterization

    Författare :Vishal Jain; Fasta tillståndets fysik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; nanowire; infrared; photodetector; APD; thermal imaging; telecommunication; fabrication; InP; InAsP; Fysicumarkivet A:2016:Jain;

    Sammanfattning : Semiconductors are the backbone of almost every electrical or optical component, one of them being photodetectors. Photodetectors are used in many applications such as digital cameras or solar panels. They can also be designed to detect the omnipresent infrared radiation, discovered in 1800, which is invisible to human eye. LÄS MER

  5. 24. High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications

    Författare :Himanshu Kataria; Sebastian Lourdudoss; Matty Caymax; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) technology and is supported by extensive experimental results. The aimed applications are light sources on silicon for electronics-photonics integration and cost effective high efficiency multijunction solar cells. LÄS MER

  7. 25. Photoelectron spectroscopy on III-V semiconductors : valence bands, core levels and core excitons

    Författare :Henric Oscarsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; InP 110 :As; surface; InAs; valence band; MBE; photoelectron spectroscopy; core level; core exciton; semiconductor; GaAs 111 A;

    Sammanfattning : .... LÄS MER